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| APTGF75H120TG Full - Bridge NPT IGBT Power Module VBUS Q1 Q3 VCES = 1200V IC = 75A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control G1 G3 E1 Q2 OUT1 OUT2 Q4 E3 G2 G4 E2 NTC1 NTC2 E4 0/VBUS Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant Max ratings 1200 100 75 150 20 500 150A @ 1200V Unit V APTGF75H120TG - Rev 2 July, 2006 G3 E3 G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C A V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF75H120TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE, IC = 2.5 mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6.5 500 Unit A V V nA 3.2 3.9 4.5 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 7.5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 7.5 VGE = 15V Tj = 125C VBus = 600V IC = 75A Tj = 125C R G = 7.5 Min Typ 5.1 0.7 0.4 120 50 310 20 130 60 360 30 9 Max Unit nF ns ns mJ 4 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C IF = 50A VR = 600V Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 500 Unit V A A V ns C mJ APTGF75H120TG - Rev 2 July, 2006 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 50A 50 2.1 1.9 95 190 4.2 9 1.5 3 di/dt =1500A/s www.microsemi.com 2-5 APTGF75H120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.25 0.6 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M5 2500 -40 -40 -40 2.5 SP4 Package outline (dimensions in mm) ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF75H120TG - Rev 2 July, 2006 APTGF75H120TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 150 125 100 IC (A) VGE =12V TJ = 125C VGE=20V VGE=15V 150 125 IC (A) T J=25C 100 75 50 25 0 0 1 2 3 VCE (V) 4 5 6 TJ =125C 75 50 25 0 0 1 2 3 4 V CE (V) 5 6 VGE=9V Transfert Characteristics 150 125 100 E (mJ) IC (A) 75 50 25 0 5 6 7 8 9 10 11 12 V GE (V) Switching Energy Losses vs Gate Resistance 35 30 25 E (mJ) 20 15 10 5 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 70 Eoff V CE = 600V V GE =15V I C = 75A T J = 125C Eon T J=25C T J=125C Energy losses vs Collector Current 28 24 20 16 12 8 4 0 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 150 125 IC (A) 100 75 50 25 0 0 300 600 900 1200 1500 V CE (V) VGE=15V T J=125C RG=7.5 Eoff Er V CE = 600V V GE = 15V RG = 7.5 T J = 125C Eon 100 125 150 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10 IGBT rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF75H120TG - Rev 2 July, 2006 APTGF75H120TG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 90 80 70 60 50 40 30 20 10 0 0 ZVS V CE=600V D=50% RG =7.5 T J=125C T C=75C Forward Characteristic of diode 125 100 75 50 25 0 T J=25C hard switching IC (A) ZCS T J=125C 20 40 60 IC (A) 80 100 0 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Diode 0.9 0.7 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF75H120TG - Rev 2 July, 2006 |
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